Mechanochemical preparation of BaTiO3–Ni nanocomposites with high dielectric constant

Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectric

Effect of surface preparation on the radiation hardness of MOS devices with high dielectric constant gate dielectric of HfO2 and metal gate of TiN is studied using extreme ultra-violet (EUV) light as the radiation source. Three kinds of surface treatment including HF-last, chemical-oxidation, and rapid-thermal-oxidation were evaluated. Among them, chemical-oxidation exhibits the best radiation ...

High dielectric constant oxides

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...

Solution processable high dielectric constant nanocomposites based on ZrO2 nanoparticles for flexible organic transistors.

A solution-based strategy for fabrication of high dielectric constant (κ) nanocomposites for flexible organic field effect transistors (OFETs) has been developed. The nanocomposite was composed of a high-κ polymer, cyanoethyl pullulan (CYELP), and a high-κ nanoparticle, zirconium dioxide (ZrO2). Organic field effect transistors (OFETs) based on neat CYELP exhibited anomalous behavior during dev...

On Materials of High Dielectric Constant.

* This work was supported by a grant from the National Science Foundation. 'Yarmolinsky, M. B., and G. L. de la Haba, these PROCEEDINGS, 45, 1721 (1959). 2 Nathans, D., and F. Lipmann, these PROCEEDINGS, 47, 497 (1961). 3Wecker, E., and E. Schonne, these PROCEEDINGS, 47, 278 (1961). 4 Wecker, E., and A. Richter, in Basic Mechanisms in Animal Virus Biology, Cold Spring Harbor Symposia on Quantit...

Dielectric Properties of Graphite Nanocomposites